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IRF5800PbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
Reference to 25°C, I D = 1mA
?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
–––
0.085 V GS = -10V, I D = -4.0A
0.150 V GS = -4.5V, I D = -3.0A
?
?
μA
nA
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
-1.0
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11.4
2.3
––– V V DS = V GS , I D = -250μA
––– S V DS = -10V, I D = -4.0A
-1.0 V DS = -24V, V GS = 0V
-5.0 V DS = -24V, V GS = 0V, T J = 70°C
-100 V GS = -20V
100 V GS = 20V
17 I D = -4.0A
––– nC V DS = -16V
Q gd
Gate-to-Drain ("Miller") Charge
–––
2.2
––– V GS = -10V
?
ns
t d(on)
t r
t d(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
–––
–––
11.4
11
24
17 V DD = -15V, V GS = -10V
17 I D = -1.0A
36 R G = 6.0 ?
t f
C iss
C oss
C rss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
14
535
94
68
20 R D = 15 ? ,
––– V GS = 0V
––– pF V DS = -25V
––– ? = 1.0MHz
?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
???
???
???
???
- 2.0
- 32
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
16
-1.2
28
24
V
ns
nC
T J = 25°C, I S = -2.0A, V GS = 0V
T J = 25°C, I F = -2.0A
di/dt = -100A/μs ?
?
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature.
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
? Surface mounted on FR-4 board, t ≤ 5sec.
? Starting T J = 25°C, L = 2.5mH
R G = 25 ? , I AS = -4.0A. (See Fig 10 )
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